Wafer Dicing Solution
 

KH Series for Wafer : Electroplated HUB Blade
KH 3 - 08 20
Specification
Unit : um
Grit Size
1 0 ~ 2
2 1 ~ 3
3 2 ~ 4
4 2 ~ 6
5 4 ~ 6
6 4 ~ 8
10 8 ~ 16
Kert Width
08 15 ~ 20
10 20 ~ 25
12 25 ~ 30
14 30 ~ 35
16 35 ~ 40
18 40 ~ 45
20 45 ~ 50
22 50 ~ 60
Blade Exposure
10 250 ~ 380
15 380 ~ 510
20 510 ~ 640
25 640 ~ 760
30 760 ~ 890
35 890 ~ 1,000
40 1,000 ~ 1,150
45 1,150 ~ 1,300
* Actual spec. range of kerf width and exposure may be changed for optimized performance.
Internal Code
Bond Type
P M G
Soft Medium Hard
Diamond Concentration
1 2 3
Low
(52 - 55%)
Standard
(55 - 58%)
High
(58 - 62%)
Other
Factor
1 ~ 9
* Not designated in specification.
Thickness and Exposure Selection
Thickness Selection
Exposure Selection
Blade Selection Guide
Standard
Model
Internal
Code
Mian Application Wafer
Thickness
KH1 0815 M21 GaAs, GaP ~ 250
KH2 0815 G12 Thin Wafer ~ 200
KH3 0815 M23 Thin Wafer, Backside Chipping ~ 300
0820 G34 ASIC 200 ~ 300
0820 G35 IC, TR 200 ~ 300
KH4 0820 G32 IC, TR 200 ~ 300
1830 M33 Step Cut(1st), Bevel Cut 200 ~ 400
KH5 1015 M21 Backside Chipping ~ 300
1015 G34 SiC 200 ~ 800
1230 G25 Step Cut(2nd), Bevel Cut 200 ~ 800
KH6 1635 G21 TCP 200 ~ 800
KH10 1615 M22 SiC, Bevel Cut(Glass, Quartz, SUS) ~ 400
Diamond Distribution & Concentration
Front Side Back Side Cross Section(SEM)
Front Side Back Side Cross Section(SEM)

 
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